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dc.contributor.authorLin, Chun-Yien_US
dc.contributor.authorLi, Wei-Tsungen_US
dc.contributor.authorRao, Pei-Zongen_US
dc.contributor.authorChung, Shyh-Jongen_US
dc.date.accessioned2017-04-21T06:50:10Z-
dc.date.available2017-04-21T06:50:10Z-
dc.date.issued2014en_US
dc.identifier.isbn978-2-87487-035-4en_US
dc.identifier.issn2325-0305en_US
dc.identifier.urihttp://hdl.handle.net/11536/135295-
dc.description.abstractIn this paper, a novel temperature-insensitive gyrator is proposed with a temperature-compensated technique. The proposed gyrator-based active inductor composed of two back-to-back transconductors with a complementary technique are realized in triple-well 0.18-mu m CMOS technology. The complementary circuit topology is adopted to decrease the variation caused by temperature effect on the tranceconductance of the gyrator. Based on the temperature-compensated gyrator, the measured resonate frequency variation of the proposed gyrator-based active LC-tank circuit topology is less than 1% from 8.72% when the temperature varies from -20 to +60 degree centigrade (C-0). The value of frequency variation percentage over per degree centigrade is simply 0.012 which presents a lowest frequency variation than the traditional gyrator topology.en_US
dc.language.isoen_USen_US
dc.subjectGyratoren_US
dc.subjecttemperature compensationen_US
dc.subjectactive inductoren_US
dc.subjectproportional to absolute temperature (PTAT)en_US
dc.titleTemperature-Insensitive Gyrator-based Active Inductor with the Complementary Technique and Its Applicationsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2014 44TH EUROPEAN MICROWAVE CONFERENCE (EUMC)en_US
dc.citation.spage711en_US
dc.citation.epage714en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000392912200178en_US
dc.citation.woscount0en_US
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