CMOS 0.18 mu m Standard Process Capacitive MEMS High-Q Oscillator with Ultra Low-Power TIA Readout System

Abstract

This paper presents the first monolithic ultra-low power MEMS oscillator that can be manufactured in the ASIC compatible standard CMOS process and monolithically integrated with TIA circuitry. It is designed for high Q value and moderate motional impedance under strict design constraints of the standard fabrication process. A high gain ultra-low power sustaining TIA amplifier circuit is compactly integrated with the resonator structure on a single die for low-power 32 kHz clock generation. The proposed 1.69 mu W MEMS oscillator can be embedded in common SoC applications monolithically to provide clock sources.