Novel BEOL InGaZnO R-load-Type Logic-Gate Technology

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DC 欄位	值	語言
dc.contributor.author	Chan, Chin-Wen	en_US
dc.contributor.author	Lin, Horng-Chih	en_US
dc.contributor.author	Huang, Tiao-Yuan	en_US
dc.date.accessioned	2017-04-21T06:50:15Z	-
dc.date.available	2017-04-21T06:50:15Z	-
dc.date.issued	2014	en_US
dc.identifier.isbn	978-1-4799-5677-7	en_US
dc.identifier.issn	2161-4636	en_US
dc.identifier.uri	http://hdl.handle.net/11536/135336	-
dc.description.abstract	N-channel InGaZnO (IGZO) inverters with a resistor-load were fabricated with film-profile engineering (FPE). In this scheme the profiles of the deposition films contained in the device are tailored to adjust its operation characteristics. The fabricated drive thin-film transistors (TFTs) show steep subthreshold swing (88 mV/dec) and high on/off current ratio (> 10(8)). Functional operation of the inverters is demonstrated with this simple scheme.	en_US
dc.language.iso	en_US	en_US
dc.title	Novel BEOL InGaZnO R-load-Type Logic-Gate Technology	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2014 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)	en_US
dc.contributor.department	電機學院	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	College of Electrical and Computer Engineering	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000393376800072	en_US
dc.citation.woscount	0	en_US
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