標題: Anomalous Electrostatics and Intrinsic Variability in GeOI p-MOSFET
作者: Yu, Chang-Hung
Su, Pin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2014
摘要: We have reported anomalous electrostatic behaviors in drain-induced-barrier-lowering (DIBL), threshold voltage (VT) roll-off, subthreshold swing (SS), and intrinsic VT variability in GeOI p-MOSFET. The underlying mechanism responsible for these anomalous electrostatic characteristics is attributed to the valence-band offset between Ge channel and Si substrate due to their significant discrepancy in bandgap. This band offset results in an effective built-in forward body bias in GeOI pFET, and leads to different carrier profiles between GeOI pFET and nFET.
URI: http://hdl.handle.net/11536/135339
ISBN: 978-1-4799-5677-7
ISSN: 2161-4636
期刊: 2014 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)
Appears in Collections:Conferences Paper