完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Yu, Chang-Hung | en_US |
dc.contributor.author | Su, Pin | en_US |
dc.date.accessioned | 2017-04-21T06:50:14Z | - |
dc.date.available | 2017-04-21T06:50:14Z | - |
dc.date.issued | 2014 | en_US |
dc.identifier.isbn | 978-1-4799-5677-7 | en_US |
dc.identifier.issn | 2161-4636 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/135339 | - |
dc.description.abstract | We have reported anomalous electrostatic behaviors in drain-induced-barrier-lowering (DIBL), threshold voltage (VT) roll-off, subthreshold swing (SS), and intrinsic VT variability in GeOI p-MOSFET. The underlying mechanism responsible for these anomalous electrostatic characteristics is attributed to the valence-band offset between Ge channel and Si substrate due to their significant discrepancy in bandgap. This band offset results in an effective built-in forward body bias in GeOI pFET, and leads to different carrier profiles between GeOI pFET and nFET. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Anomalous Electrostatics and Intrinsic Variability in GeOI p-MOSFET | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2014 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000393376800094 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 會議論文 |