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dc.contributor.authorYeh, Chih-Tungen_US
dc.contributor.authorWang, Wei-Kaien_US
dc.contributor.authorShen, Yi-Siangen_US
dc.contributor.authorHorng, Ray-Huaen_US
dc.date.accessioned2017-04-21T06:49:10Z-
dc.date.available2017-04-21T06:49:10Z-
dc.date.issued2016-05en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.7567/JJAP.55.05FK06en_US
dc.identifier.urihttp://hdl.handle.net/11536/135378-
dc.description.abstractEnhancement-mode AlGaN/GaN high-electron-mobility transistors (HEMTs) were fabricated on a Si substrate by fluorine plasma treatment without pre-etching. The threshold voltage shifted from % 8 to 2.3 V, effectively converting the depletion-mode HEMT to the enhancement-mode HEMT. The leakage current was reduced by two orders of magnitude by CF4 plasma treatment. The device exhibited a superior performance with a maximum drain saturation current of 210mA/mm at V-GS = 10V and a peak gain of 44.1mS/mm. A low off-state gate leakage current of 10(-6)mA/mm, ION/IOFF ratio of approximately 10(8), and high breakdown voltage of 1480V were obtained. (C) 2016 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.title1.48-kV enhancement-mode AlGaN/GaN high-electron-mobility transistors fabricated on 6-in. silicon by fluoride-based plasma treatmenten_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.7567/JJAP.55.05FK06en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume55en_US
dc.citation.issue5en_US
dc.contributor.department電機學院zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000374697600085en_US
dc.citation.woscount2en_US
Appears in Collections:Conferences Paper