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dc.contributor.authorChang, Wei-Lingen_US
dc.contributor.authorMeng, Chinchunen_US
dc.contributor.authorWong, Shyh-Chyien_US
dc.contributor.authorChien, Hweyen_US
dc.contributor.authorHuang, Guo-Weien_US
dc.date.accessioned2017-04-21T06:49:47Z-
dc.date.available2017-04-21T06:49:47Z-
dc.date.issued2015en_US
dc.identifier.isbn978-2-8748-7039-2en_US
dc.identifier.issn2325-0305en_US
dc.identifier.urihttp://hdl.handle.net/11536/135435-
dc.description.abstractThis paper demonstrates a new temperature insensitive bias circuit using a Wilson current mirror for the InGaP/GaAs HBT power amplifier. The Wilson current mirror has a high impedance node for connecting an on/off digital interface and a stable voltage node for injection of feedback signals to achieve a temperature insensitive bias. The fabricated output stage of the power amplifier with the feedback through the Wilson current source shows a stable bias current with current variation from 186 mA to 182 mA for the temperature range from 25 degrees C to 200 degrees C. A bias circuit without the feedback through the Wilson current source is also fabricated for comparison and shows a strong bias current variation over temperature.en_US
dc.language.isoen_USen_US
dc.subjectInGaP/GaAs HBTen_US
dc.subjecttemperature insensitiveen_US
dc.subjectpower amplifieren_US
dc.subjectWilson current mirroren_US
dc.titleTemperature Insensitive PA Bias Circuit With Digital Control Interface Using InGaP/GaAs HBT Technologyen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2015 45TH EUROPEAN MICROWAVE CONFERENCE (EUMC)en_US
dc.citation.spage1283en_US
dc.citation.epage1286en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000377204600315en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


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