| 標題: | Ultralow leakage In0.53Ga0.47As p-i-n photodetector grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate |
| 作者: | Lin, GR Kuo, HC Lin, CK Feng, M 光電工程學系 Department of Photonics |
| 關鍵字: | GaAs;InGaP;In0.53Ga0.47As;metamorphic;p-i-n photodetector |
| 公開日期: | 1-Jun-2005 |
| 摘要: | A novel top-illuminated In-0.53 Ga-0.47 As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using linearly graded metamorphic InxGa1-xP (x graded from 0.49 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 mu m are 13 pA, 0.6 A/W, 3.4 x 10(-15) W/Hz(1/2), and 7.5 GHz, respectively, at 1550 nm. The performances of the MM-PINPD on GaAs are demonstrated to be comparable to those of a similar device made on InGaAs-InP substrate. |
| URI: | http://dx.doi.org/10.1109/JQE.2005.847570 http://hdl.handle.net/11536/13631 |
| ISSN: | 0018-9197 |
| DOI: | 10.1109/JQE.2005.847570 |
| 期刊: | IEEE JOURNAL OF QUANTUM ELECTRONICS |
| Volume: | 41 |
| Issue: | 6 |
| 起始頁: | 749 |
| 結束頁: | 752 |
| Appears in Collections: | Articles |
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- Low-leakage In(0.53)Ga(0.47)As p-i-n photodetector fabricated on GaAs substrate with linearly graded metamorphic In(x)Ga(1-x)P buffer / Lin, CK;Kuo, HC;Liao, YS;Lin, GR
- Undoped InP sandwiched InGaAs p-i-n photodetector with partially p-doped photoabsorption layer grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate / Liao, Yu-Sheng;Lin, Gong-Ru;Kuo, Hao-Chung;Feng, Milton
- Undoped InP sandwiched InGaAs p-i-n photodetector with partially p-doped photoabsorption layer grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate - art. no. 61190L / Liao, Yu-Sheng;Lin, Gong-Ru;Kuo, Hao-Chung;Feng, Milton
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