標題: Ultralow leakage In0.53Ga0.47As p-i-n photodetector grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate
作者: Lin, GR
Kuo, HC
Lin, CK
Feng, M
光電工程學系
Department of Photonics
關鍵字: GaAs;InGaP;In0.53Ga0.47As;metamorphic;p-i-n photodetector
公開日期: 1-Jun-2005
摘要: A novel top-illuminated In-0.53 Ga-0.47 As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using linearly graded metamorphic InxGa1-xP (x graded from 0.49 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 mu m are 13 pA, 0.6 A/W, 3.4 x 10(-15) W/Hz(1/2), and 7.5 GHz, respectively, at 1550 nm. The performances of the MM-PINPD on GaAs are demonstrated to be comparable to those of a similar device made on InGaAs-InP substrate.
URI: http://dx.doi.org/10.1109/JQE.2005.847570
http://hdl.handle.net/11536/13631
ISSN: 0018-9197
DOI: 10.1109/JQE.2005.847570
期刊: IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume: 41
Issue: 6
起始頁: 749
結束頁: 752
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