Microwave Annealing

doi:10.1063/1.4766505

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lee, Yao-Jen	en_US
dc.contributor.author	Cho, T. -C.	en_US
dc.contributor.author	Chuang, S. -S.	en_US
dc.contributor.author	Hsueh, F. -K.	en_US
dc.contributor.author	Lu, Y. -L.	en_US
dc.contributor.author	Sung, J.	en_US
dc.contributor.author	Chen, S. -J.	en_US
dc.contributor.author	Lo, C. -H.	en_US
dc.contributor.author	Lai, C. -H.	en_US
dc.contributor.author	Current, Michael I.	en_US
dc.contributor.author	Tseng, T. -Y.	en_US
dc.contributor.author	Chao, T. -S.	en_US
dc.contributor.author	Yang, F. -L.	en_US
dc.date.accessioned	2017-04-21T06:49:53Z	-
dc.date.available	2017-04-21T06:49:53Z	-
dc.date.issued	2012	en_US
dc.identifier.isbn	978-0-7354-1109-8	en_US
dc.identifier.issn	0094-243X	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.4766505	en_US
dc.identifier.uri	http://hdl.handle.net/11536/135485	-
dc.description.abstract	Microwave annealing of dopants in Si has been reported to produce highly activated junctions at temperatures far below those needed for comparable results using conventional thermal processes. However the details of the kinetics and mechanisms for microwave annealing are far from well understood. Comparisons between MWA and RTA of dopants in implanted Si has been investigated to produce highly activated junctions. First, As, P-31, and BF2 implants in Si substrate were annealed by MWA at temperatures below 550 degrees C.	en_US
dc.language.iso	en_US	en_US
dc.subject	microwave	en_US
dc.subject	MWA	en_US
dc.subject	low temperature	en_US
dc.subject	SPEG	en_US
dc.subject	dopant activation	en_US
dc.title	Microwave Annealing	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1063/1.4766505	en_US
dc.identifier.journal	ION IMPLANTATION TECHNOLOGY 2012	en_US
dc.citation.volume	1496	en_US
dc.citation.spage	123	en_US
dc.citation.epage	128	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000312160700028	en_US
dc.citation.woscount	0	en_US
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