Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Fan, Yang-Shun | en_US |
dc.contributor.author | Hsu, Ching-Hui | en_US |
dc.contributor.author | Chang, Chih-Hsiang | en_US |
dc.contributor.author | Huang, Wei-Hsun | en_US |
dc.contributor.author | Yu, Ming-Chang | en_US |
dc.contributor.author | Liu, Po-Tsun | en_US |
dc.date.accessioned | 2017-04-21T06:49:55Z | - |
dc.date.available | 2017-04-21T06:49:55Z | - |
dc.date.issued | 2012 | en_US |
dc.identifier.issn | 1883-2490 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/135498 | - |
dc.description.abstract | The memory characteristics of a-IGZO RRAM reveal excellent reliability including 1000 times DC sweep endurance, 10(4) pulse endurance, 10(4)s data retention with read disturb immunity. Furthermore, this work also demonstrated on flexible substrate, which shows the very potential flexibility applications. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Flexible | en_US |
dc.subject | Non-volatile Memory | en_US |
dc.subject | RRAM | en_US |
dc.subject | IGZO | en_US |
dc.subject | Reliability | en_US |
dc.title | Flexible Non-Volatile Memory Based on Indium-Gallium-Zinc-Oxide with Excellent Reliability and Flexibility | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, VOL 19 | en_US |
dc.citation.volume | 19 | en_US |
dc.citation.spage | 783 | en_US |
dc.citation.epage | 784 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000393448700203 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Conferences Paper |