Effects of Random Work Function Fluctuations in Nanoszied Metal Grains on Electrical Characteristic of 16 nm High-kappa/Metal Gate Bulk FinFETs

Abstract

In this work, the work function fluctuation (WKF) induced variability in 16-nm-gate planar MOSFET and bulk FinFET is for the first time explored and compared. Based upon an experimentally calibrated 3D device simulation, the newly developed localized WKF (LWKF) simulation technique enables us to estimate the threshold voltage and DC baseband fluctuations of devices which accounts for the random grain\'s number and position effects simultaneously. The results show that the random work function, resulting from local nanosized metal grains in bulk FinFET, induced relatively small threshold voltage (V-th) fluctuation (about 2.5 times lower), compared with the result of planar device.