標題: Effects of Random Work Function Fluctuations in Nanoszied Metal Grains on Electrical Characteristic of 16 nm High-kappa/Metal Gate Bulk FinFETs
作者: Cheng, Hui-Wen
Chiu, Yung-Yueh
Li, Yiming
電機學院
電子工程學系及電子研究所
College of Electrical and Computer Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: High-kappa/metal gate;Work function fluctuation;3D device simulation;Localized work function fluctuation simulation technqiue;Threshold voltage fluctuation;On/Off state current fluctuation;Potential profile;and current distribution
公開日期: 2011
摘要: In this work, the work function fluctuation (WKF) induced variability in 16-nm-gate planar MOSFET and bulk FinFET is for the first time explored and compared. Based upon an experimentally calibrated 3D device simulation, the newly developed localized WKF (LWKF) simulation technique enables us to estimate the threshold voltage and DC baseband fluctuations of devices which accounts for the random grain\'s number and position effects simultaneously. The results show that the random work function, resulting from local nanosized metal grains in bulk FinFET, induced relatively small threshold voltage (V-th) fluctuation (about 2.5 times lower), compared with the result of planar device.
URI: http://hdl.handle.net/11536/135544
ISBN: 978-1-4398-7139-3
期刊: NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2
起始頁: 30
結束頁: 33
Appears in Collections:Conferences Paper