Structural and Electrical Properties of High-k HoTiO3 Gate Dielectrics

doi:10.1149/1.3375607

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Pan, Tung-Ming	en_US
dc.contributor.author	Yen, Li-Chen	en_US
dc.contributor.author	Hu, Chia-Wei	en_US
dc.contributor.author	Chao, Tien-Sheng	en_US
dc.date.accessioned	2017-04-21T06:48:35Z	-
dc.date.available	2017-04-21T06:48:35Z	-
dc.date.issued	2010	en_US
dc.identifier.isbn	978-1-60768-141-0	en_US
dc.identifier.issn	1938-5862	en_US
dc.identifier.uri	http://dx.doi.org/10.1149/1.3375607	en_US
dc.identifier.uri	http://hdl.handle.net/11536/135563	-
dc.description.abstract	We developed a high-k HoTiO3 gate dielectric deposited on Si (100) through reactive cosputtering. They found that the HoTiO3 dielectrics annealed at 800 degrees C exhibited excellent electrical properties such as high capacitance value, small density of interface state, almost no hysteresis voltage, and low leakage current. This phenomenon is attributed to the decrease in intrinsic defect due to the formation of well-crystallized HoTiO3 structure and composition.	en_US
dc.language.iso	en_US	en_US
dc.title	Structural and Electrical Properties of High-k HoTiO3 Gate Dielectrics	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1149/1.3375607	en_US
dc.identifier.journal	ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 6: NEW MATERIALS, PROCESSES, AND EQUIPMENT	en_US
dc.citation.volume	28	en_US
dc.citation.issue	1	en_US
dc.citation.spage	241	en_US
dc.citation.epage	245	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000313489900025	en_US
dc.citation.woscount	1	en_US
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