標題: High quality ultrathin CoTiO3 high-k gate dielectrics
作者: Pan, TM
Lei, TF
Chao, TS
Chang, KL
Hsieh, KC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-九月-2000
摘要: A novel high-k cobalt-titanium oxide (CoTiO3) was formed by directly oxidizing sputtered Co/Ti film. Al/CoTiO3/Si3N4/Si capacitor structure was fabricated and measured. The effective dielectric constant with buffered layer for CoTiO3 gate dielectric can reach as high as 40 while depicting excellent electrical properties at the same time. This novel metal oxide thus appears to be a promising high-k gate dielectric for future ultralarge scale integrated devices. (C) 2000 The Electrochemical Society. S1099-0062(00)03-095-9. All rights reserved.
URI: http://dx.doi.org/10.1149/1.1391170
http://hdl.handle.net/11536/30280
ISSN: 1099-0062
DOI: 10.1149/1.1391170
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 3
Issue: 9
起始頁: 433
結束頁: 434
顯示於類別:期刊論文