Transportation model establishment of InGaZnO for thin film transistor device application

標題:	Transportation model establishment of InGaZnO for thin film transistor device application
作者:	Teng, Li-Feng Liu, Po-Tsun Chou, Yi-Teh Fan, Yang-Shun 光電工程學系顯示科技研究所 Department of Photonics Institute of Display
公開日期:	2010
摘要:	The transportation model of on electrical metastability of a-InGaZnO TFT is established. The generation of oxygen vacancies by the annealing in a vacuum led to an increased loll and large Vth shifts, while N-2 and O-2 ambience effectively improve the device performance. A physical mechanism is also reasonably proposed.
URI:	http://hdl.handle.net/11536/135583
ISSN:	1883-2490
期刊:	IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3
起始頁:	1845
結束頁:	1847
顯示於類別：	會議論文