Characteristics imrovement for flexible a-Si:H Thin Film Transistor with post treatment processes

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Teng, Li-Feng	en_US
dc.contributor.author	Liu, Po-Tsun	en_US
dc.contributor.author	Chou, Yi-Teh	en_US
dc.contributor.author	Fan, Yang-Shun	en_US
dc.date.accessioned	2017-04-21T06:48:37Z	-
dc.date.available	2017-04-21T06:48:37Z	-
dc.date.issued	2010	en_US
dc.identifier.issn	1883-2490	en_US
dc.identifier.uri	http://hdl.handle.net/11536/135585	-
dc.description.abstract	The performances of flexible a-Si:H TFTs on stainless foil with and without silicon nitride passivation layer were discussed in this study. The experiment results indicated the reliability of a-Si:H TFTs with passivation layer under mechanical strains was improved. That\'s related to the hydrogen passivating effect during deposition and post-annealing process.	en_US
dc.language.iso	en_US	en_US
dc.title	Characteristics imrovement for flexible a-Si:H Thin Film Transistor with post treatment processes	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3	en_US
dc.citation.spage	2207	en_US
dc.citation.epage	2209	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	顯示科技研究所	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.contributor.department	Institute of Display	en_US
dc.identifier.wosnumber	WOS:000393718700585	en_US
dc.citation.woscount	0	en_US
顯示於類別：	會議論文