Improving Electrical Properties of Bottom-Gate Poly(3-Hexylthiophene) Thin-Film Transistor Using CF4 Plasma Treatment

Abstract

In this letter, the effect of CF4 plasma treatment on poly(3-hexylthiophene)-based organic thin-film transistors has been investigated. It was found that CF4 plasma treatment on the source/drain electrode can reduce contact resistance and increase mobility. The CF4 plasma treatment can increase the mobility from 0.0021 to 0.0102 cm(2)/V . s and decrease the contact resistance by about 70%. Moreover, the CF4 plasma treatment is compatible with the bottom-gate bottom-contact structure without degrading the SiO2 layer.