Improving Electrical Properties of Bottom-Gate Poly(3-Hexylthiophene) Thin-Film Transistor Using CF4 Plasma Treatment

doi:10.1109/LED.2013.2244840

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wu, Hung-Chi	en_US
dc.contributor.author	Chien, Chao-Hsin	en_US
dc.date.accessioned	2014-12-08T15:30:22Z	-
dc.date.available	2014-12-08T15:30:22Z	-
dc.date.issued	2013-04-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2013.2244840	en_US
dc.identifier.uri	http://hdl.handle.net/11536/21717	-
dc.description.abstract	In this letter, the effect of CF4 plasma treatment on poly(3-hexylthiophene)-based organic thin-film transistors has been investigated. It was found that CF4 plasma treatment on the source/drain electrode can reduce contact resistance and increase mobility. The CF4 plasma treatment can increase the mobility from 0.0021 to 0.0102 cm(2)/V . s and decrease the contact resistance by about 70%. Moreover, the CF4 plasma treatment is compatible with the bottom-gate bottom-contact structure without degrading the SiO2 layer.	en_US
dc.language.iso	en_US	en_US
dc.subject	Organic thin-film transistors (OTFTs)	en_US
dc.subject	plasma treatment	en_US
dc.subject	poly(3-hexylthiophene) (P3HT)	en_US
dc.title	Improving Electrical Properties of Bottom-Gate Poly(3-Hexylthiophene) Thin-Film Transistor Using CF4 Plasma Treatment	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2013.2244840	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	34	en_US
dc.citation.issue	4	en_US
dc.citation.spage	538	en_US
dc.citation.epage	540	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000316813100021	-
dc.citation.woscount	1	-
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