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dc.contributor.authorLi, YMen_US
dc.contributor.authorYu, SMen_US
dc.date.accessioned2014-12-08T15:18:51Z-
dc.date.available2014-12-08T15:18:51Z-
dc.date.issued2005-07-01en_US
dc.identifier.issn0010-4655en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.cpc.2005.03.069en_US
dc.identifier.urihttp://hdl.handle.net/11536/13561-
dc.description.abstractNumerical solution of the Schrodinger and Poisson equations (SPEs) plays an important role in semiconductor simulation. We in this paper present a robust iterative method to compute the self-consistent solution of the SPEs in nanoscale metal-oxide-semiconductor (MOS) structures. Based on the global convergence of the monotone iterative (Ml) method in solving the quantum corrected nonlinear Poisson equation (PE), this iterative method is successfully implemented and tested on the single-, double-, and surrounding-gate (SG, DG, and AG) MOS structures. Compared with other approaches, various numerical simulations are demonstrated to show the accuracy and efficiency of the method. (c) 2005 Elsevier B.V All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectSchrodinger and Poisson equationsen_US
dc.subjectquantum corrected Poisson equationen_US
dc.subjectnumerical iterative methoden_US
dc.subjectmonotone iterative methoden_US
dc.subjectnanoscale MOS structuresen_US
dc.titleA numerical iterative method for solving Schrodinger and Poisson equations in nanoscale single, double and surrounding gate metal-oxide-semiconductor structuresen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.cpc.2005.03.069en_US
dc.identifier.journalCOMPUTER PHYSICS COMMUNICATIONSen_US
dc.citation.volume169en_US
dc.citation.issue1-3en_US
dc.citation.spage309en_US
dc.citation.epage312en_US
dc.contributor.department友訊交大聯合研發中心zh_TW
dc.contributor.departmentD Link NCTU Joint Res Ctren_US
dc.identifier.wosnumberWOS:000230528100067-
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