標題: A 5-GHz, 30-dBm, 0.9-dB insertion loss single-pole double-throw T/R switch in 90nm CMOS
作者: Fu, Chang-Tsung
Taylor, Stewart S.
Ku, Chien-Nan
交大名義發表
National Chiao Tung University
關鍵字: RF switch;T/R switch;wireless LAN;time division multiplexing
公開日期: 2008
摘要: A 5GHz, 30-dBm CMOS T/R switch implemented in 90nm CMOS is reported. A body isolation technique is employed and optimized for power handling capability. Inductors are employed with the transistor switches for parallel resonance to improve isolation. Thick oxide NMOS transistors are used for the switching transistors and placed inside the inductors to reduce the active chip area to approximately 0.2mm(2). 0.9-dB insertion loss for both TX and RX modes is achieved with a 5-V control voltage.
URI: http://hdl.handle.net/11536/135641
ISBN: 978-1-4244-1808-4
ISSN: 1529-2517
期刊: 2008 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, VOLS 1 AND 2
起始頁: 283
結束頁: +
Appears in Collections:Conferences Paper