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dc.contributor.authorChen, Shuo-Weien_US
dc.contributor.authorYang, Youngen_US
dc.contributor.authorWen, Wei-Chihen_US
dc.contributor.authorLi, Hengen_US
dc.contributor.authorLu, Tien-Changen_US
dc.date.accessioned2019-04-03T06:47:27Z-
dc.date.available2019-04-03T06:47:27Z-
dc.date.issued2016-01-01en_US
dc.identifier.isbn978-1-5106-0003-4en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://dx.doi.org/10.1117/12.2211721en_US
dc.identifier.urihttp://hdl.handle.net/11536/135699-
dc.description.abstractEx-situ sputtered AlN nucleation layer has been demonstrated effective to significantly improve crystal quality and electrical properties of GaN epitaxy layers for GaN based Light-emitting diodes (LEDs). In this report, we have successfully reduced X-ray (102) FWHM from 240 to 110 arcsec, and (002) FWHM from 230 to 101 arcsec. In addition, reverse-bias voltage (Vr) increased around 20% with the sputtered AlN nucleation layer. Furthermore, output power of LEDs grown on sputtered AlN nucleation layer can be improved around 4.0% compared with LEDs which is with conventional GaN nucleation layer on pattern sapphire substrate (PSS).en_US
dc.language.isoen_USen_US
dc.subjectlight-emitting diodes (LEDs)en_US
dc.subjectAlNen_US
dc.subjectinternal quantum efficiency (IQE)en_US
dc.subjectmultiple quantum wells (MQWs)en_US
dc.subjectsputteren_US
dc.titleSignificant Improvement of GaN Crystal Quality with Ex-situ Sputtered AlN Nucleation Layersen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1117/12.2211721en_US
dc.identifier.journalLIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XXen_US
dc.citation.volume9768en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000378432300020en_US
dc.citation.woscount1en_US
Appears in Collections:Conferences Paper


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