U-Band pHEMT Divide-by-Three ILFD

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chang, Wei-Ling	en_US
dc.contributor.author	Meng, Chinchun	en_US
dc.contributor.author	Tsung, Kuan-Chang	en_US
dc.contributor.author	Huang, Guo-Wei	en_US
dc.date.accessioned	2017-04-21T06:50:16Z	-
dc.date.available	2017-04-21T06:50:16Z	-
dc.date.issued	2015	en_US
dc.identifier.isbn	978-2-8748-7040-8	en_US
dc.identifier.uri	http://hdl.handle.net/11536/135720	-
dc.description.abstract	A fully integrated 0.15-mu m AlGaAs/InGaAs pseudomorphic high electron mobility transistor (pHEMT) divide-by-three injection locked frequency divider (ILFD) with Marchand balun is demonstrated in this paper. The Marchand Balun provides broadband and balanced differential signals at millimeter wave frequencies due to the low loss GaAs semi-insulating substrate. The divide-by-three ILFD performs a locking range from 44 GHz to 47 GHz at the supply voltage of 6 V and the core current consumption is 6.24 mA.	en_US
dc.language.iso	en_US	en_US
dc.subject	Divide-by-three injection locked frequency divider	en_US
dc.subject	AlGaAs/InGaAs pHEMT	en_US
dc.subject	Marchand Balun	en_US
dc.title	U-Band pHEMT Divide-by-Three ILFD	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2015 10TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC)	en_US
dc.citation.spage	13	en_US
dc.citation.epage	16	en_US
dc.contributor.department	電機工程學系	zh_TW
dc.contributor.department	Department of Electrical and Computer Engineering	en_US
dc.identifier.wosnumber	WOS:000377769200004	en_US
dc.citation.woscount	0	en_US
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