Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lin, Da-Wei | en_US |
dc.contributor.author | Tzou, An-Jye | en_US |
dc.contributor.author | Huang, Jhih-Kai | en_US |
dc.contributor.author | Lin, Bing-Cheng | en_US |
dc.contributor.author | Chang, Chun-Yen | en_US |
dc.contributor.author | Kuo, Hao-Chung | en_US |
dc.date.accessioned | 2017-04-21T06:49:28Z | - |
dc.date.available | 2017-04-21T06:49:28Z | - |
dc.date.issued | 2015 | en_US |
dc.identifier.isbn | 978-1-4799-8379-7 | en_US |
dc.identifier.issn | 2158-3234 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/135779 | - |
dc.description.abstract | We presented a low efficiency droop behavior green light emitting diodes (LEDs) with a quaternary content InAlGaN/GaN superlattice electron blocking layer (SL-EBL). The light output power shows a 57% enhancement and only 30% efficiency droop, which is attributed to a smooth band bending with a uniform carrier distribution. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Green LEDs | en_US |
dc.subject | Efficiency droop | en_US |
dc.subject | Quaternary superlattice electron blocking layer | en_US |
dc.title | Greatly Improved Efficiency Droop for InGaN-Based Green Light Emitting Diodes by Quaternary Content Superlattice Electron Blocking Layer | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 15TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES NUSOD 2015 | en_US |
dc.citation.spage | 15 | en_US |
dc.citation.epage | 16 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000380401200008 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Conferences Paper |