Greatly Improved Efficiency Droop for InGaN-Based Green Light Emitting Diodes by Quaternary Content Superlattice Electron Blocking Layer

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, Da-Wei	en_US
dc.contributor.author	Tzou, An-Jye	en_US
dc.contributor.author	Huang, Jhih-Kai	en_US
dc.contributor.author	Lin, Bing-Cheng	en_US
dc.contributor.author	Chang, Chun-Yen	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.date.accessioned	2017-04-21T06:49:28Z	-
dc.date.available	2017-04-21T06:49:28Z	-
dc.date.issued	2015	en_US
dc.identifier.isbn	978-1-4799-8379-7	en_US
dc.identifier.issn	2158-3234	en_US
dc.identifier.uri	http://hdl.handle.net/11536/135779	-
dc.description.abstract	We presented a low efficiency droop behavior green light emitting diodes (LEDs) with a quaternary content InAlGaN/GaN superlattice electron blocking layer (SL-EBL). The light output power shows a 57% enhancement and only 30% efficiency droop, which is attributed to a smooth band bending with a uniform carrier distribution.	en_US
dc.language.iso	en_US	en_US
dc.subject	Green LEDs	en_US
dc.subject	Efficiency droop	en_US
dc.subject	Quaternary superlattice electron blocking layer	en_US
dc.title	Greatly Improved Efficiency Droop for InGaN-Based Green Light Emitting Diodes by Quaternary Content Superlattice Electron Blocking Layer	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	15TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES NUSOD 2015	en_US
dc.citation.spage	15	en_US
dc.citation.epage	16	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000380401200008	en_US
dc.citation.woscount	0	en_US
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