Study on the ESD-Induced Gate-Oxide Breakdown and the Protection Solution in 28nm High-K Metal-Gate CMOS Technology

Abstract

To protect the IC chips against the electrostatic discharge (ESD) damages in 28nm high-k metal-gate (HKMG) CMOS technology, the ESD protection consideration was studied in this work. The ESD design window was found to be within 1V and 5.1V in 28nm HKMG CMOS technology. An ESD protection device of PMOS with embedded silicon-controlled rectifier (SCR) was investigated to be suitable for ESD protection in such narrow ESD design window.