标题: Study on the ESD-Induced Gate-Oxide Breakdown and the Protection Solution in 28nm High-K Metal-Gate CMOS Technology
作者: Lin, Chun-Yu
Ker, Ming-Dou
Chang, Pin-Hsin
Wang, Wen-Tai
电子工程学系及电子研究所
Department of Electronics Engineering and Institute of Electronics
关键字: CMOS;electrostatic discharge (ESD);high-k metal-gate (HKMG);silicon-controlled rectifier (SCR)
公开日期: 2015
摘要: To protect the IC chips against the electrostatic discharge (ESD) damages in 28nm high-k metal-gate (HKMG) CMOS technology, the ESD protection consideration was studied in this work. The ESD design window was found to be within 1V and 5.1V in 28nm HKMG CMOS technology. An ESD protection device of PMOS with embedded silicon-controlled rectifier (SCR) was investigated to be suitable for ESD protection in such narrow ESD design window.
URI: http://hdl.handle.net/11536/135820
ISBN: 978-1-4673-9362-1
期刊: 2015 IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE (NMDC)
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