In-x Ga1-x As Materials for Post CMOS Application: Materials and Device Aspects

Abstract

High mobility InxGa1-xAs material is one of the most promising candidates as channel material for post CMOS device applications. In this presentation, InxGa1-xAs material based MOS capacitors will be studied for possible applications for future III-V MOSFET, TFET and FINFET devices. To improve the gate leakage of the InxGa1-xAs MOSCAP, the combination of wet chemical treatment and in-situ trimethyl aluminum (TMA) pretreatment was found to be the most effective method for InxGa1-xAs surface cleaning to achieve a fully inverted InxGa1-xAs MOSCAP for post CMOS digital applications. In addition, a high-k composite oxide composed of La2O3 and HfO2 is investigated for InxGa1-xAs metal-oxide-semiconductor (MOS) capacitor application. The composite oxide was formed by depositing five layers of La2O3(0.8 nm)/HfO2(0.8 nm) on InxGa1-xAs with post deposition annealing at 500 degrees C. The MOS capacitors fabricated show good inversion behavior, high capacitance, low leakage current, with excellent interface trap density (D-it) of 7.0 x 10(11) cm(-2)eV(-1), small hysteresis of 200 mV and low capacitance equivalent thickness of 2.2 nm at 1 kHz were also achieved.