標題: | Studying of InSb MOS Capacitors for Post CMOS Application |
作者: | Chang, Edward Yi Hai-Dang Trinh Lin, Yueh-Chin 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | CMOS;MOSCAPs;InSb;Al2O3;HfO2;sub-nanometter;band alignment |
公開日期: | 2013 |
摘要: | In this study, the properties of high-k/InSb are verified. The gate dielectrics including Al2O3 and HfO2 are used for studying. The band alignment of Al2O3/InSb and HfO2/InSb are estimated using x-ray photoelectron spectroscopy spectra and Fowler-Nordheim (F-N) current-voltage (I-V) characteristic. The effect of annealing temperatures on the electrical properties of the MOSCAPs is also studied. It is found that the In, Sb out diffusion into high-k would be a major reason to degrade the electrical properties of high k/InSb structures. |
URI: | http://hdl.handle.net/11536/23929 |
ISBN: | 978-1-4799-0518-8 |
期刊: | 2013 28TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO 2013) |
顯示於類別: | 會議論文 |