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dc.contributor.authorChang, Edward Yien_US
dc.contributor.authorHai-Dang Trinhen_US
dc.contributor.authorLin, Yueh-Chinen_US
dc.date.accessioned2014-12-08T15:35:18Z-
dc.date.available2014-12-08T15:35:18Z-
dc.date.issued2013en_US
dc.identifier.isbn978-1-4799-0518-8en_US
dc.identifier.urihttp://hdl.handle.net/11536/23929-
dc.description.abstractIn this study, the properties of high-k/InSb are verified. The gate dielectrics including Al2O3 and HfO2 are used for studying. The band alignment of Al2O3/InSb and HfO2/InSb are estimated using x-ray photoelectron spectroscopy spectra and Fowler-Nordheim (F-N) current-voltage (I-V) characteristic. The effect of annealing temperatures on the electrical properties of the MOSCAPs is also studied. It is found that the In, Sb out diffusion into high-k would be a major reason to degrade the electrical properties of high k/InSb structures.en_US
dc.language.isoen_USen_US
dc.subjectCMOSen_US
dc.subjectMOSCAPsen_US
dc.subjectInSben_US
dc.subjectAl2O3en_US
dc.subjectHfO2en_US
dc.subjectsub-nanometteren_US
dc.subjectband alignmenten_US
dc.titleStudying of InSb MOS Capacitors for Post CMOS Applicationen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2013 28TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO 2013)en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000332492400073-
Appears in Collections:Conferences Paper


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