Studying of InSb MOS Capacitors for Post CMOS Application

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chang, Edward Yi	en_US
dc.contributor.author	Hai-Dang Trinh	en_US
dc.contributor.author	Lin, Yueh-Chin	en_US
dc.date.accessioned	2014-12-08T15:35:18Z	-
dc.date.available	2014-12-08T15:35:18Z	-
dc.date.issued	2013	en_US
dc.identifier.isbn	978-1-4799-0518-8	en_US
dc.identifier.uri	http://hdl.handle.net/11536/23929	-
dc.description.abstract	In this study, the properties of high-k/InSb are verified. The gate dielectrics including Al2O3 and HfO2 are used for studying. The band alignment of Al2O3/InSb and HfO2/InSb are estimated using x-ray photoelectron spectroscopy spectra and Fowler-Nordheim (F-N) current-voltage (I-V) characteristic. The effect of annealing temperatures on the electrical properties of the MOSCAPs is also studied. It is found that the In, Sb out diffusion into high-k would be a major reason to degrade the electrical properties of high k/InSb structures.	en_US
dc.language.iso	en_US	en_US
dc.subject	CMOS	en_US
dc.subject	MOSCAPs	en_US
dc.subject	InSb	en_US
dc.subject	Al2O3	en_US
dc.subject	HfO2	en_US
dc.subject	sub-nanometter	en_US
dc.subject	band alignment	en_US
dc.title	Studying of InSb MOS Capacitors for Post CMOS Application	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2013 28TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO 2013)	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000332492400073	-
顯示於類別：	會議論文