標題: Studying of InSb MOS Capacitors for Post CMOS Application
作者: Chang, Edward Yi
Hai-Dang Trinh
Lin, Yueh-Chin
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: CMOS;MOSCAPs;InSb;Al2O3;HfO2;sub-nanometter;band alignment
公開日期: 2013
摘要: In this study, the properties of high-k/InSb are verified. The gate dielectrics including Al2O3 and HfO2 are used for studying. The band alignment of Al2O3/InSb and HfO2/InSb are estimated using x-ray photoelectron spectroscopy spectra and Fowler-Nordheim (F-N) current-voltage (I-V) characteristic. The effect of annealing temperatures on the electrical properties of the MOSCAPs is also studied. It is found that the In, Sb out diffusion into high-k would be a major reason to degrade the electrical properties of high k/InSb structures.
URI: http://hdl.handle.net/11536/23929
ISBN: 978-1-4799-0518-8
期刊: 2013 28TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO 2013)
Appears in Collections:Conferences Paper