標題: | POST SULFURIZATION EFFECT ON THE MOS2 GROWN BY PULSED LASER DEPOSITION |
作者: | Ho, Yen-Teng Yen, Tzu-Chun Luong, Tien-Tung Wei, Lin-Lung Tu, Yung-Yi Chu, Yung-Ching Hsu, Hung-Ru Chang, Edward Yi 材料科學與工程學系 電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2016 |
摘要: | Two inches size with high quality layered growth of MoS2 was achieved by PLD on c-plane sapphire substrate. 2-3 monolayer MoS2 was obtained within 2 inches wafer estimated from Raman analysis and confirmed by cross-sectional view of TEM. Additionally, the oxide states of Mo 3d core level spectra of MoS2, analyzed by XPS, can be effectively reduced by adopting a post sulfurization process in H2S. The post process also improve the photoluminescence (PL) of MoS2 as well as the electrical characteristic of MoS2 FET due to elimination the Mo oxide in the grown film. |
URI: | http://hdl.handle.net/11536/135894 |
ISBN: | 978-1-4673-8805-4 |
期刊: | 2016 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC) |
顯示於類別: | 會議論文 |