標題: POST SULFURIZATION EFFECT ON THE MOS2 GROWN BY PULSED LASER DEPOSITION
作者: Ho, Yen-Teng
Yen, Tzu-Chun
Luong, Tien-Tung
Wei, Lin-Lung
Tu, Yung-Yi
Chu, Yung-Ching
Hsu, Hung-Ru
Chang, Edward Yi
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 2016
摘要: Two inches size with high quality layered growth of MoS2 was achieved by PLD on c-plane sapphire substrate. 2-3 monolayer MoS2 was obtained within 2 inches wafer estimated from Raman analysis and confirmed by cross-sectional view of TEM. Additionally, the oxide states of Mo 3d core level spectra of MoS2, analyzed by XPS, can be effectively reduced by adopting a post sulfurization process in H2S. The post process also improve the photoluminescence (PL) of MoS2 as well as the electrical characteristic of MoS2 FET due to elimination the Mo oxide in the grown film.
URI: http://hdl.handle.net/11536/135894
ISBN: 978-1-4673-8805-4
期刊: 2016 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC)
Appears in Collections:Conferences Paper