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dc.contributor.authorChen, Yu-Chengen_US
dc.contributor.authorLin, Yi-Chengen_US
dc.contributor.authorYu, Liang-Chianen_US
dc.contributor.authorYu, Peichenen_US
dc.date.accessioned2017-04-21T06:49:12Z-
dc.date.available2017-04-21T06:49:12Z-
dc.date.issued2015en_US
dc.identifier.isbn978-1-4799-7944-8en_US
dc.identifier.issn0160-8371en_US
dc.identifier.urihttp://hdl.handle.net/11536/135896-
dc.description.abstractHybrid organic-silicon solar cells are promising candidates for next-generation photovoltaics due to their low fabrication cost and scalable roll-to-roll processes. However, the power conversion efficiency (PCE) cannot compete with those of traditional silicon solar cells yet mostly due to surface reflection and interface recombination losses. In this work, we investigate the sidewall profile and interface defects of silicon nanorod templates, fabricated by means of polystyrene lithography, followed by metal-assisted chemical etch (MACE), for hybrid photovoltaics. The control of nanorod sidewall profile is important to organic surface coverage, as well as optical absorption for thin-silicon substrates, whereas the control of interface defects is important to boost the open-circuit voltage of hybrid devices. We systematically compared the optical and electrical characteristics of hybrid organic-silicon nanorod (Si NR) devices made with different noble metal etching catalysts: gold (Au) and silver (Ag), which result in different surface morphologies. The preliminary results show that Si NRs made of Ag catalysts have lower interface defects than those of Au catalysts. After passivated by 10nm-Al2O3, the minority carrier lifetime is 157 mu sec (A g) versus 29 mu sec (Au). Moreover, a PCE of 11.9% is achieved with the hybrid solar cells using Ag catalysts without any post-etching surface treatment, where the short-circuit current is as high as >34 mA/cm(2) enhanced by the nearly periodical pillar arrangement. The Si NR template made with Au catalysts requires further damage removal etch (DRE), which also lead to a high PCE of 11.37% and Jsc of similar to 34 mA/cm(2) . Currently optimization of device structure and fabrication technique is still in process and more experimental and simulation data will be presented.en_US
dc.language.isoen_USen_US
dc.subjectheterojunctionen_US
dc.subjecthybrid solar cellen_US
dc.subjectmetal-assisted chemical etchingen_US
dc.subjectnanostructureen_US
dc.titleProfile and interface control of hybrid organic-silicon nanorod solar cellsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000369992900145en_US
dc.citation.woscount0en_US
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