標題: Optical Properties of InN-Based Photo detection Devices
作者: Hsu, Lung-Hsing
Lin, Chien-Chung
Hwang, Yi-Chia
Su, Chen-Fung
Lin, Shih-Yen
Kuo, Hao-Chung
光電系統研究所
照明與能源光電研究所
光電工程學系
Institute of Photonic System
Institute of Lighting and Energy Photonics
Department of Photonics
關鍵字: Infrared;Indium compounds;photodetection devices;nanostructured materials
公開日期: 2015
摘要: The InN capped with GaN structures is promising for extended visible and infrared absorption. The low growth temperature of GaN/InN epitaxy was fabricated by a low-pressure metal organic chemical vapor deposition system. The strain effect and mixed InxGa1-xN complex of the GaN/InN layer were investigated via Raman and photoluminescence (PL) measurements. The capping GaN with similar growth temperature of previous InN growth induces the gallium diffusion mechanism to form InxGa1-xN complex. The blue-shift phenomenon of multiple GaN/InN peaks with increasing growth temperature was attributed to residual strain and higher Ga content of InGaN. A ZnO/GaN/InN photodetection device is demonstrated with extended IR response, and the quantum efficiency is 2.28%.
URI: http://hdl.handle.net/11536/135940
ISBN: 978-1-4799-7944-8
ISSN: 0160-8371
期刊: 2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)
顯示於類別:會議論文