標題: | Optical Properties of InN-Based Photo detection Devices |
作者: | Hsu, Lung-Hsing Lin, Chien-Chung Hwang, Yi-Chia Su, Chen-Fung Lin, Shih-Yen Kuo, Hao-Chung 光電系統研究所 照明與能源光電研究所 光電工程學系 Institute of Photonic System Institute of Lighting and Energy Photonics Department of Photonics |
關鍵字: | Infrared;Indium compounds;photodetection devices;nanostructured materials |
公開日期: | 2015 |
摘要: | The InN capped with GaN structures is promising for extended visible and infrared absorption. The low growth temperature of GaN/InN epitaxy was fabricated by a low-pressure metal organic chemical vapor deposition system. The strain effect and mixed InxGa1-xN complex of the GaN/InN layer were investigated via Raman and photoluminescence (PL) measurements. The capping GaN with similar growth temperature of previous InN growth induces the gallium diffusion mechanism to form InxGa1-xN complex. The blue-shift phenomenon of multiple GaN/InN peaks with increasing growth temperature was attributed to residual strain and higher Ga content of InGaN. A ZnO/GaN/InN photodetection device is demonstrated with extended IR response, and the quantum efficiency is 2.28%. |
URI: | http://hdl.handle.net/11536/135940 |
ISBN: | 978-1-4799-7944-8 |
ISSN: | 0160-8371 |
期刊: | 2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) |
顯示於類別: | 會議論文 |