Enhanced Photoresponse of InN Devices Using Indium-Tin Oxide Nanorods

Abstract

Enhanced infrared photoresponse is observed in InN/ITO rods fabricated by LP-MOCVD and oblique-angle electron beam evaporation. The higher growth temperature and more V/III could trend toward hexagonal InN pillars epitaxy. The peak energy blue-shift phenomenon due to higher Fermilevel to acceptor emission was investigated by temperature dependent photoluminescence (PL) measurements. ITO nanorods enhanced the broadband and angle-independent anti-reflection in the range between 400 nm and 2000 nm. The InN/ITO rods photodetection device was demonstrated with enhanced IR response, and the portion photocurrent (610 nm long pass) of InN detection as high as 24.5% measured via AM1.5G solar simulated spectra.