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dc.contributor.authorHsu, Lung-Hsingen_US
dc.contributor.authorCheng, Yuh-Jenen_US
dc.contributor.authorYu, Peichenen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorLin, Chien-Chungen_US
dc.date.accessioned2019-04-02T06:04:28Z-
dc.date.available2019-04-02T06:04:28Z-
dc.date.issued2017-01-01en_US
dc.identifier.issn0160-8371en_US
dc.identifier.urihttp://hdl.handle.net/11536/150975-
dc.description.abstractEnhanced infrared photoresponse is observed in InN/ITO rods fabricated by LP-MOCVD and oblique-angle electron beam evaporation. The higher growth temperature and more V/III could trend toward hexagonal InN pillars epitaxy. The peak energy blue-shift phenomenon due to higher Fermilevel to acceptor emission was investigated by temperature dependent photoluminescence (PL) measurements. ITO nanorods enhanced the broadband and angle-independent anti-reflection in the range between 400 nm and 2000 nm. The InN/ITO rods photodetection device was demonstrated with enhanced IR response, and the portion photocurrent (610 nm long pass) of InN detection as high as 24.5% measured via AM1.5G solar simulated spectra.en_US
dc.language.isoen_USen_US
dc.subjectInfrareden_US
dc.subjectIndium compoundsen_US
dc.subjectphotodetection devicesen_US
dc.subjectnanostructured materialsen_US
dc.titleEnhanced Photoresponse of InN Devices Using Indium-Tin Oxide Nanorodsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)en_US
dc.citation.spage1610en_US
dc.citation.epage1613en_US
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000455636001140en_US
dc.citation.woscount0en_US
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