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dc.contributor.authorLin, Shih-Lien_US
dc.contributor.authorTseng, Hung-Rueien_US
dc.contributor.authorHsu, Shun-Chiehen_US
dc.contributor.authorChen, Yin-Hanen_US
dc.contributor.authorLin, Chien-Chungen_US
dc.date.accessioned2017-04-21T06:49:15Z-
dc.date.available2017-04-21T06:49:15Z-
dc.date.issued2015en_US
dc.identifier.isbn978-1-4799-7944-8en_US
dc.identifier.issn0160-8371en_US
dc.identifier.urihttp://hdl.handle.net/11536/135973-
dc.description.abstractA numerical method to correlate the surface recombination velocity and the Fermi-level pinning is provided. This correlation was integrated into the simulation of the GaAs nano-scale solar cells, and the surface-dependent performance of the solar cells can be obtained. This method is also applied to the simulation of the radial-junction nanorod solar cells with sidewall contacts.en_US
dc.language.isoen_USen_US
dc.subjectNumerical methoden_US
dc.subjectPhotovoltaic Devicesen_US
dc.subjectSurface Recombination Velocityen_US
dc.subjectFermi-Level Pinningen_US
dc.subjectMetal-Semiconductor Contacten_US
dc.subjectGallium Arsenideen_US
dc.titleNumerical Study of Surface-dependent performances of Nano-scale Solar Cellsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)en_US
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.identifier.wosnumberWOS:000369992902073en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper