完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lin, Shih-Li | en_US |
dc.contributor.author | Tseng, Hung-Ruei | en_US |
dc.contributor.author | Hsu, Shun-Chieh | en_US |
dc.contributor.author | Chen, Yin-Han | en_US |
dc.contributor.author | Lin, Chien-Chung | en_US |
dc.date.accessioned | 2017-04-21T06:49:15Z | - |
dc.date.available | 2017-04-21T06:49:15Z | - |
dc.date.issued | 2015 | en_US |
dc.identifier.isbn | 978-1-4799-7944-8 | en_US |
dc.identifier.issn | 0160-8371 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/135973 | - |
dc.description.abstract | A numerical method to correlate the surface recombination velocity and the Fermi-level pinning is provided. This correlation was integrated into the simulation of the GaAs nano-scale solar cells, and the surface-dependent performance of the solar cells can be obtained. This method is also applied to the simulation of the radial-junction nanorod solar cells with sidewall contacts. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Numerical method | en_US |
dc.subject | Photovoltaic Devices | en_US |
dc.subject | Surface Recombination Velocity | en_US |
dc.subject | Fermi-Level Pinning | en_US |
dc.subject | Metal-Semiconductor Contact | en_US |
dc.subject | Gallium Arsenide | en_US |
dc.title | Numerical Study of Surface-dependent performances of Nano-scale Solar Cells | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | en_US |
dc.contributor.department | 光電系統研究所 | zh_TW |
dc.contributor.department | 照明與能源光電研究所 | zh_TW |
dc.contributor.department | Institute of Photonic System | en_US |
dc.contributor.department | Institute of Lighting and Energy Photonics | en_US |
dc.identifier.wosnumber | WOS:000369992902073 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 會議論文 |