Title: Vertical SCR Structure for On-Chip ESD Protection in Nanoscale CMOS Technology
Authors: Lin, Chun-Yu
Chang, Pin-Hsin
Chang, Rong-Kun
Ker, Ming-Dou
Wang, Wen-Tai
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Issue Date: 2015
Abstract: A vertical silicon-controlled rectifier (SCR) structure utilizing ESD implantation layer was proposed and implemented in nanoscale CMOS technology. Compared with the traditional SCR structure, the proposed structure has lower trigger voltage and high enough ESD protection capability. Therefore, the proposed structure was suitable for ESD protection in nanoscale CMOS process.
URI: http://hdl.handle.net/11536/135977
ISBN: 978-1-4799-9928-6
ISSN: 1946-1550
Journal: PROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015)
Begin Page: 255
End Page: 258
Appears in Collections:Conferences Paper