標題: | Vertical SCR Structure for On-Chip ESD Protection in Nanoscale CMOS Technology |
作者: | Lin, Chun-Yu Chang, Pin-Hsin Chang, Rong-Kun Ker, Ming-Dou Wang, Wen-Tai 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2015 |
摘要: | A vertical silicon-controlled rectifier (SCR) structure utilizing ESD implantation layer was proposed and implemented in nanoscale CMOS technology. Compared with the traditional SCR structure, the proposed structure has lower trigger voltage and high enough ESD protection capability. Therefore, the proposed structure was suitable for ESD protection in nanoscale CMOS process. |
URI: | http://hdl.handle.net/11536/135977 |
ISBN: | 978-1-4799-9928-6 |
ISSN: | 1946-1550 |
期刊: | PROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015) |
起始頁: | 255 |
結束頁: | 258 |
Appears in Collections: | Conferences Paper |