| 標題: | Interface Polarization Fluctuation Effect of Ferroelectric Hafnium-Zirconium-Oxide Ferroelectric Memory with Nearly Ideal Subthreshold Slope |
| 作者: | Chiu, Yu-Chien Cheng, Chun-Hu Fan, Chia-Chi Chen, Po-Chun Chang, Chun-Yen Lee, Min-Hung Liu, Chien Yen, Shiang-Shiou Hsu, Hsiao-Hsuan 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| 公開日期: | 2015 |
| URI: | http://hdl.handle.net/11536/135989 |
| ISBN: | 978-1-4673-8135-2 |
| 期刊: | 2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC) |
| 起始頁: | 41 |
| 結束頁: | 42 |
| Appears in Collections: | Conferences Paper |
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- On the Electrical Characteristics of Ferroelectric FinFET Using Hafnium Zirconium Oxide with Optimized Gate Stack / Lin, M. H.;Fan, C. C.;Hsu, H. H.;Liu, C.;Chen, K. M.
- Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based Transistors / Cheng, Chun-Hu;Lin, Ming-Huei;Chen, Hsin-Yu;Fan, Chia-Chi;Liu, Chien
- Ferroelectric Characterization of Hafnium-Oxide-Based Ferroelectric Memories with Remote Nitrogen Plasma Treatments / Lee, You-Ting;Chen, Hsuan-Han;Tung, Yi-Chun;Shih, Bing-Yang;Hsiung, Szu-Yen
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