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dc.contributor.authorHuang, KMen_US
dc.contributor.authorWang, KLen_US
dc.contributor.authorWang, DPen_US
dc.contributor.authorHuang, KFen_US
dc.contributor.authorHuang, TCen_US
dc.contributor.authorChu, AKen_US
dc.date.accessioned2014-12-08T15:01:14Z-
dc.date.available2014-12-08T15:01:14Z-
dc.date.issued1997-12-29en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/11536/135-
dc.description.abstractThe electroreflectance (ER) spectra of an undoped n(+)-type doped GaAs have been measured over a range of temperature from 25 to 400 K. Many Franz-Keldysh oscillations were observed above the band-gap energy, which enabled the electric field strength and, hence, also the Fermi level to be determined. The photovoltaic effect is shown to be negligible, even at the low temperature. The experiment shows that the Fermi level decreases with increasing temperature and has almost the same temperature dependence as the energy gap. It is pinned at about 0.63 of energy gap below the conduction band. (C) 1997 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleTemperature dependence of Fermi level obtained by electroreflectance spectroscopy of undoped n(+)-type doped GaAsen_US
dc.typeArticleen_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume71en_US
dc.citation.issue26en_US
dc.citation.spage3889en_US
dc.citation.epage3891en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000071184700048-
dc.citation.woscount0-
Appears in Collections:Articles