標題: | Critical point energy as a function of electric field determined by electroreflectance of surface-intrinsic-n(+) type doped GaAs |
作者: | Chen, YS Wu, KS Wang, DP Huang, KF Huang, TC 電子物理學系 Department of Electrophysics |
公開日期: | 1-十一月-2004 |
摘要: | Electroreflectance of surface-intrinsic-n(+) type doped GaAs has been measured over a various biased voltage. The spectra have exhibited many Franz-Keldysh oscillations (FKOs) above band gap energy E-g. The electric field F and critical point energy E-c can be determined from the slope and intercept of FKOs fitting. Hence, we can obtain E-c as a function of F. In most of previous works, E-c is taken as E-g. However, it was found that E-c increases with F in this work. In order to explain this, the gain of energy of electron and hole in F was discussed. (C) 2004 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.1814794 http://hdl.handle.net/11536/25655 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.1814794 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 85 |
Issue: | 18 |
起始頁: | 4064 |
結束頁: | 4066 |
顯示於類別: | 期刊論文 |