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dc.contributor.authorLin, Yu-Hsinen_US
dc.contributor.authorCheng, Yuan-Chiehen_US
dc.contributor.authorChu, Nien-Nanen_US
dc.contributor.authorHsu, Wensyangen_US
dc.contributor.authorTang, Yu-Hsiangen_US
dc.contributor.authorChen, Po-Lien_US
dc.contributor.authorYang, Chih-Chungen_US
dc.contributor.authorHsiao, Ming-Huaen_US
dc.contributor.authorHsiao, Chien-Nanen_US
dc.date.accessioned2017-04-21T06:48:23Z-
dc.date.available2017-04-21T06:48:23Z-
dc.date.issued2015en_US
dc.identifier.isbn978-1-4673-6695-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/136001-
dc.description.abstractIn this paper, the compensative structure assisted the convex and concave corner structures etch in inductively coupled plasma reactive ion etch (ICP-RIE) have been studied. In anisotropic silicon etching, under the Bosch patent, sequentially alternating etch and passivation cycles can easily achieve high aspect ratio silicon structures. But, the feature size of the convex and concave corner structures are difficult to maintain as original design at the bottom position in deep etch, due to non-vertical movement plasma etch. A compensative structure can obstruct the non-vertical plasma to etch the convex corner structures and reduce the etch lag effect during the etch process leading to better profile at deep etch. The current study systematically investigates plasma condition to verify feasibility of the proposed method, and discusses effect of the gap between compensative structure and convex and concave corner structures at three different gaps of 15, 10, 5 mu m. It demonstrate the compensative structure with small gap in front of the convex and concave corner structures have better profile at deep ICP-RIE etching.en_US
dc.language.isoen_USen_US
dc.subjectConvex and concave corner structuresen_US
dc.subjectcompensativeen_US
dc.subjectInductively-Coupled-Plasma Reactive-Ion-Etch (ICP-RIE)en_US
dc.titleThe study of compensative structure assisted convex and concave corner structures etching by Inductively Coupled Plasma-Reactive Ion Etch (ICP-RIE)en_US
dc.typeProceedings Paperen_US
dc.identifier.journal2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)en_US
dc.citation.spage491en_US
dc.citation.epage493en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.identifier.wosnumberWOS:000380505700117en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper