標題: | Gallium nitride nanorods fabricated by inductively coupled plasma reactive ion etching |
作者: | Yu, CC Chu, CF Tsai, JY Huang, HW Hsueh, TH Lin, CF Wang, SC 光電工程學系 Department of Photonics |
關鍵字: | gallium nitride (GaN);nanorod;inductively coupled plasma (ICP) |
公開日期: | 15-八月-2002 |
摘要: | We report a novel method of fabricating gallium nitride (GaN) nanotods of controllable dimension and density from GaN epitaxial film using inductively coupled plasma reactive ion etching (ICP-RIE). The GaN epitaxial film was grown on a sapphire substrate by metal-organic chemical vapor deposition. Under the fixed Cl-2/Ar flow rate of 10/25 sccm and ICP/bias power of 200/200 W. the GaN nanorods and array were fabricated with a density of 10(8)-10(10) cm(-2) and dimension of 20-100 nm by varying the chamber pressure from 10 to 30 mTorr. The technique offers one-step, controllable method for the fabrication of GaN nanostructures and should be applicable for the fabrication of GaN-based nano-optoelectronic devices. |
URI: | http://dx.doi.org/10.1143/JJAP.41.L910 http://hdl.handle.net/11536/28583 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.41.L910 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS |
Volume: | 41 |
Issue: | 8B |
起始頁: | L910 |
結束頁: | L912 |
顯示於類別: | 期刊論文 |