標題: Gallium nitride nanorods fabricated by inductively coupled plasma reactive ion etching
作者: Yu, CC
Chu, CF
Tsai, JY
Huang, HW
Hsueh, TH
Lin, CF
Wang, SC
光電工程學系
Department of Photonics
關鍵字: gallium nitride (GaN);nanorod;inductively coupled plasma (ICP)
公開日期: 15-Aug-2002
摘要: We report a novel method of fabricating gallium nitride (GaN) nanotods of controllable dimension and density from GaN epitaxial film using inductively coupled plasma reactive ion etching (ICP-RIE). The GaN epitaxial film was grown on a sapphire substrate by metal-organic chemical vapor deposition. Under the fixed Cl-2/Ar flow rate of 10/25 sccm and ICP/bias power of 200/200 W. the GaN nanorods and array were fabricated with a density of 10(8)-10(10) cm(-2) and dimension of 20-100 nm by varying the chamber pressure from 10 to 30 mTorr. The technique offers one-step, controllable method for the fabrication of GaN nanostructures and should be applicable for the fabrication of GaN-based nano-optoelectronic devices.
URI: http://dx.doi.org/10.1143/JJAP.41.L910
http://hdl.handle.net/11536/28583
ISSN: 0021-4922
DOI: 10.1143/JJAP.41.L910
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 41
Issue: 8B
起始頁: L910
結束頁: L912
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