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dc.contributor.authorTseng, Chih-Hanen_US
dc.contributor.authorLiu, Chien-Minen_US
dc.contributor.authorLin, Han-wenen_US
dc.contributor.authorChu, Yi-Chengen_US
dc.contributor.authorChen, Chihen_US
dc.contributor.authorLyu, Dian-Rongen_US
dc.contributor.authorChen, Kuan-Nengen_US
dc.contributor.authorTu, K. N.en_US
dc.date.accessioned2017-04-21T06:48:31Z-
dc.date.available2017-04-21T06:48:31Z-
dc.date.issued2015en_US
dc.identifier.isbn978-4-9040-9013-8en_US
dc.identifier.urihttp://hdl.handle.net/11536/136050-
dc.description.abstractCu-to-Cu microbumps have many advantages, such as better electrical and thermal conductivities. The Cu-to-Cu microbumps may be a potential solution to the heat dissipation problem in 3D IC integration. In addition, for packaging of CMOS image sensors, the bonding temperature is preferred to below 200 degrees C. Therefore, low temperature and low pressure Cu-to-Cu direct is of great interests for packaging industry. However, it is a challenging issue because Cu atoms diffuse slowly below 200 degrees C. In this study, we achieved low temperature and low pressure Cu bonding using highly (111)-orientated Cu films. Because the diffusivity of Cu atoms on the (111) surface diffusivity is the fastest among all the crystallographic planes of Cu. The bonding temperature can be lowered to 150 degrees C at a compressive stress of 114 psi held for 60 min at 10-3 torr. Since the melting points of popular Pb-free solders such as SnAg and SnAgCu are over 230 degrees C. Therefore the present technique can be applied to packaging of CMOS image sensors and 3D IC integration.en_US
dc.language.isoen_USen_US
dc.subjectCu-Cuen_US
dc.subjectdirect bondingen_US
dc.subjectnanotwinen_US
dc.subject3DICen_US
dc.titleLow-temperature and low pressure copper-to-copper direct bonding enabled by creep on highly (111)-oriented Cu surfacesen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2015 International Conference on Electronic Packaging and iMAPS All Asia Conference (ICEP-IAAC)en_US
dc.citation.spage523en_US
dc.citation.epage526en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000380587700071en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper