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dc.contributor.authorHuang, Jen-Hungen_US
dc.contributor.authorChen, Bai-Cien_US
dc.contributor.authorWu, Yu-Changen_US
dc.contributor.authorLin, Chien-Chungen_US
dc.date.accessioned2017-04-21T06:48:26Z-
dc.date.available2017-04-21T06:48:26Z-
dc.date.issued2015en_US
dc.identifier.isbn978-1-4799-4208-4en_US
dc.identifier.issn2378-8593en_US
dc.identifier.urihttp://hdl.handle.net/11536/136063-
dc.description.abstractThe VCSEL consisting of the HCG mirror, an active layer with InGaAsP quantum wells having optical gain around 1.31 mu m and a TiO2/Sio(2) DBR is designed. Small threshold gain can be theoretically gotten by adjusting the thickness of BCB layer and N-InP layer.en_US
dc.language.isoen_USen_US
dc.titleDesign of III-V/Silicon hybrid surface-emitting laser with grating structureen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2015 International Symposium on Next-Generation Electronics (ISNE)en_US
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department影像與生醫光電研究所zh_TW
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentInstitute of Imaging and Biomedical Photonicsen_US
dc.identifier.wosnumberWOS:000380530500003en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper