Design of III-V/Silicon hybrid surface-emitting laser with grating structure

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DC 欄位	值	語言
dc.contributor.author	Huang, Jen-Hung	en_US
dc.contributor.author	Chen, Bai-Ci	en_US
dc.contributor.author	Wu, Yu-Chang	en_US
dc.contributor.author	Lin, Chien-Chung	en_US
dc.date.accessioned	2017-04-21T06:48:26Z	-
dc.date.available	2017-04-21T06:48:26Z	-
dc.date.issued	2015	en_US
dc.identifier.isbn	978-1-4799-4208-4	en_US
dc.identifier.issn	2378-8593	en_US
dc.identifier.uri	http://hdl.handle.net/11536/136063	-
dc.description.abstract	The VCSEL consisting of the HCG mirror, an active layer with InGaAsP quantum wells having optical gain around 1.31 mu m and a TiO2/Sio(2) DBR is designed. Small threshold gain can be theoretically gotten by adjusting the thickness of BCB layer and N-InP layer.	en_US
dc.language.iso	en_US	en_US
dc.title	Design of III-V/Silicon hybrid surface-emitting laser with grating structure	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2015 International Symposium on Next-Generation Electronics (ISNE)	en_US
dc.contributor.department	光電系統研究所	zh_TW
dc.contributor.department	影像與生醫光電研究所	zh_TW
dc.contributor.department	Institute of Photonic System	en_US
dc.contributor.department	Institute of Imaging and Biomedical Photonics	en_US
dc.identifier.wosnumber	WOS:000380530500003	en_US
dc.citation.woscount	0	en_US
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