Simulation of Charge Collection Probability in GaAs and Si Solar Cells from External Quantum Efficiency

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, Shih-Li	en_US
dc.contributor.author	Tseng, Hung-Ruei	en_US
dc.contributor.author	Hsu, Shun-Chieh	en_US
dc.contributor.author	Chen, Yin-Han	en_US
dc.contributor.author	Lin, Chien-Chung	en_US
dc.date.accessioned	2017-04-21T06:48:27Z	-
dc.date.available	2017-04-21T06:48:27Z	-
dc.date.issued	2015	en_US
dc.identifier.isbn	978-1-4799-4208-4	en_US
dc.identifier.issn	2378-8593	en_US
dc.identifier.uri	http://hdl.handle.net/11536/136065	-
dc.description.abstract	The charge collection probability is one of the most important parameters of a solar cell. We derived two kinds of special functions to fit the external quantum efficiency and use then to reconstruct the charge collection probability. The simulation results of gallium arsenide and silicon solar cells are put into comparison.	en_US
dc.language.iso	en_US	en_US
dc.subject	simulation	en_US
dc.subject	charge collection probability	en_US
dc.subject	photovoltaic cells	en_US
dc.subject	Galluim Arsenide	en_US
dc.subject	Silicon	en_US
dc.subject	MATLAB (R)	en_US
dc.title	Simulation of Charge Collection Probability in GaAs and Si Solar Cells from External Quantum Efficiency	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2015 International Symposium on Next-Generation Electronics (ISNE)	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000380530500067	en_US
dc.citation.woscount	0	en_US
顯示於類別：	會議論文